Features of ion-plasmic precipitation of solid solution films (SIC)1-X(AlN)X
UDC 538.945:621.382
Guseinov M. K., Isabekov I. M., Isabekova T. I.
Abstract
Results of researches aimed at development of technology to make films of solid solutions (SiC)1-x(AlN)x are presented. Features of precipitation technology of films (SiC)1-x(AlN)x, factors influencing the structure and quality of films precipitated are considered. The structure, composition and surface morphology of received experimental samples (SiC)1-x(AlN)x were studied by X-ray diffraction and electron microscopy. Films obtained on 6H-SiC substrates at temperature T~1273 K were shown to have monocrysalline structure.
Keywords: wide-gap semiconductor, ion-plasmic precipitation, non-linear diffusion, thermalization, Wegard law, single-structure crystal
Features of ion-plasmic precipitation of solid solution films (SIC)1-X(AlN)X
Abstract
Results of researches aimed at development of technology to make films of solid solutions (SiC)1-x(AlN)x are presented. Features of precipitation technology of films (SiC)1-x(AlN)x, factors influencing the structure and quality of films precipitated are considered. The structure, composition and surface morphology of received experimental samples (SiC)1-x(AlN)x were studied by X-ray diffraction and electron microscopy. Films obtained on 6H-SiC substrates at temperature T~1273 K were shown to have monocrysalline structure.
Keywords: wide-gap semiconductor, ion-plasmic precipitation, non-linear diffusion, thermalization, Wegard law, single-structure crystal
Русский
English
